It seems I’m not the only one who thinks Alferov is a charlatan.

Academician Alferov is one of the modern scientific officials who promote unscientific methods.
Along with such figures as academician E. Kruglyakov and academician E. Alexandrov, Mr. Alferov “protects” pseudoscience within the Russian Academy of Sciences, and within the educational system, he fools the younger generation of scientists with obscurantism.

The actions of Zhores Alferov contain intent and corpus delicti in the form of:
- actions carried out by a group of persons, by prior conspiracy, aimed at falsifying scientific data and related information, resulting in deception of the general public, as well as misleading government authorities in order to provide adherents of pseudoscientific trends with special preferences and access to government funding.
- deliberate actions aimed at introducing scientifically untenable concepts into the education system of the Russian Federation, causing material damage to the Russian Federation in the form of waste of public funds for the maintenance of pseudoscientists, as well as for teaching students and schoolchildren pseudoscientific hypotheses, at public expense.
Thus, the actions of Zhores Alferov fall under Article No. 285 of the Criminal Code of the Russian Federation “Abuse of official powers”:
The use by an official of his official powers contrary to the interests of the service, if this act was committed out of selfish or other personal interest and entailed a significant violation of the rights and legitimate interests of citizens or organizations, or legally protected interests of society or the state.

In addition to the stated claims,
On the Internet there are the following unflattering opinions about Academician Alferov:

One of the most controversial figures in the Russian Academy of Sciences is Vice-President of the Russian Academy of Sciences Zhores Alferov. All his life he was not a research scientist, but “a prominent organizer of Russian science.” This title deserves respect, but should not be confused with the expression "world-class scientist." These are completely different types of activities that require dissimilar talents. Nevertheless, Zhores Alferov speaks on behalf of a corporation of real researchers, allegedly protecting their interests. And since the “Alferov phenomenon” is growing to the scale of a social phenomenon, it is worth taking a closer look at it.

The public perceives Alferov’s numerous television and print interviews as the voice of the scientific elite, which is greatly facilitated by the mention of the Nobel Prize attached to the academician’s surname. Meanwhile, moving around the Physico-Technical Institute of St. Petersburg, which he heads, it is not difficult to find out that the academician’s scientific contribution to the collective work, for which Alferov received the most prestigious international award, is minimal. The academician was the leader of the group and in this capacity acted as the organizer and administrator of the work carried out by Garbuzov, Tretyakov (who really is the legend of the Physics and Technology Institute!), Andreev, Kazarinov and Portnoy. The first three received a state prize, the last two received nothing, and Academician Alferov went to Stockholm and wrote his name in the annals of world science.

75-year-old Zhores Ivanovich cannot head the Physics and Technology Institute due to his age. But power in the institute is a matter of principle for him. Phystech receives maximum budget funding, and their distribution is the real source of Alferov’s influence at the institute, where he is actively disliked, and at the Russian Academy of Sciences, where he is shunned. In order to stay at the helm, Alferov built a complex structure of four state unitary enterprises, each of which has its own legal entity. This is, firstly, the Ioffe Institute of Physics and Technology - the largest of the Alferov organizations, secondly, the Scientific and Technical Center Center for Microelectronics and Submicron Heterostructures, of relatively modest size, thirdly, the newly built scientific and educational complex (REC) on Khlopin Street, 8 and, fourthly, the Physics and Technology Lyceum, which was recently transferred to the NOC building. This entire structure, in turn, is united into a kind of “holding” with a common scientific council and president. The president's name is Zhores Alferov.

Zhores Ivanovich appointed himself president, but he did not have time to perform the functions of a leader. After talking with scientists, you can be convinced that Phystech is not actually managed. Departments and laboratories lead an independent life, which is not bad from the point of view of freedom of creativity and research initiative, but is absolutely contraindicated if the state intends to implement large scientific projects with a calculated economic effect. Norilsk Nickel was sold photocopies of works from ten years ago, which caused the righteous anger of the metallurgists, who broke the contract. And when Minatom ordered a technology for growing structures for LEDs for its center in Snezhinsk (RFAC VNIITF), nuclear scientists received a development that would not produce any LEDs. The result was the same as with Norilsk Nickel: they took the money, but the beneficial effect was zero. It turns out that the Physicotechnical Institute does not have serious technologies suitable for commercialization. What does the state invest money in?

The answer is simple: budget funds are siphoned into the pockets of businessmen from science. There are many small firms operating on the territory of Phystech, using the territory, premises and equipment of the state institute for commercial development. They are led by Phystech employees, who in the activities of their companies develop, with benefit for themselves, but without any benefit for the institute, the very directions that are being pursued with public money. This business is also profitable from a competitive point of view. Entrepreneurs from the Physicotechnical Institute do not pay for utilities and rent, do not incur any expenses for research and development, and do not pay VAT on purchased equipment. They only sell manufactured prototypes, knowingly dumping them. What’s curious is that FTI itself doesn’t get a penny from this trade. The heads of the labs explain that costs (budgetary!) still exceed profits (which go into pockets), and therefore the state should remain the main supplier of financial resources. It is difficult to establish the true size of the turnover of Phystech businessmen - the Russian Academy of Sciences does not check the activities of the Physicotechnical Institute, and it would be strange if the Vice-President of the Russian Academy of Sciences Zhores Alferov initiated such an audit.

The indecent story of awarding himself the Global Energy Prize in 2005 (the prize fund was $1 million) made the President of the Russian Academy of Sciences, Yuri Osipov, recoil from Zhores Alferov. On May 25, in an exquisitely courteous letter, he informed Alferov that he was resigning as a member of the Board of Trustees of the Global Energy Prize due to “heavy workload.” But it is clear to those initiated that the sudden increase in “workload” is caused by a natural desire to make it clear to the scientific community that Osipov was not involved in the decision of the Alferov Foundation. The prize was awarded for work in the field of solar energy - for example, the name of Andreev from the Physicotechnical Institute, who works in this field, is known throughout the world. But no one had heard of Alferov’s outstanding contribution to solar energy. Perhaps the son of the academician, Ivan Zhoresovich Alferov, who manages the distribution of money from the Alferov Fund, heard something about this. When journalists from St. Petersburg Channel Five asked where Zhores Ivanovich would spend his million, the academician explained that he was going to buy equipment for his Scientific and Educational Complex. Let's look at this plot in a little more detail.

All the best and most efficient equipment is transported from the Physics and Technology Center to the modern and spacious building of the Scientific and Educational Complex of the St. Petersburg Federal Technical Research Center of the Russian Academy of Sciences. The operation of gratuitously transferring valuable property from one legal entity to another is questionable from a legal point of view, but even more curious, why was it needed? It looks like the Physicotechnical Institute im. Ioffe, deprived of its instrument base, is finally written off and turns into a conglomerate of tenants. An academic institute of this rank will not be privatized, so the inattention of the old caretaker to it is quite understandable from a financial point of view. In addition, the well-known business predator Samsung has long ago gained access to all the secrets of the institute, having created a joint laboratory with the Physicotechnical Institute. Physicotechnical Institute employees regularly go to work for a Korean concern, using the intellectual potential and achievements of Phystech for the benefit of the “Far Eastern Tiger.” So in terms of scientific know-how, Phystech is also not very attractive. But the NOC building, along with the valuable equipment brought there, may well end up on the privatization lists of the Federal Property Management Agency. The institute says so directly: “Zhores Ivanovich is preparing for privatization.”

© "New News" (Moscow), 06/30/2005
Rocky road

Stanislav Kunitsyn

Minister Andrei Fursenko proposes to separate real estate from science Today, at a government meeting, the issue of increasing the efficiency of the public sector of science will be considered, at which the Minister of Education and Science Andrei Fursenko will make a report.

The Minister proposes to define clear criteria for the feasibility of ongoing research; cut down on wasted scientific organizations, thereby increasing funding for promising areas of work. In addition, the Ministry of Education considers it necessary to place under state control the income received by the leadership of the Russian Academy of Sciences from real estate management.

Russia ranks first in the world in terms of the number of scientific workers. True, neither this nor the Nobel Prizes that occur in the Russian Academy of Sciences, where the average salary of employees does not exceed 7,000 rubles, are no longer able to maintain the prestige of Russian science even in the eyes of their own citizens.

A special study on this topic was recently conducted in 44 large cities by the Public Opinion Foundation. It turned out that only 40% of respondents approve of the Academy’s activities. Just a year ago this figure was at 61%.

The validity of such pessimism is confirmed by global statistics. In terms of the effectiveness of innovation policy, our country today ranks 69th in the world.

In Russia, 70% of scientific institutions belong to the state. Moreover, contrary to popular belief, government allocations for science are increasing from year to year. The 2006 budget provides 71.7 billion rubles for these purposes. On June 2, the Ministry of Education and Science submitted to the Russian Government a plan for modernizing the academic sector of science, which would allow the budget funds allocated to the Russian Academy of Sciences to be used as efficiently as possible. In particular, the document contains proposals for restructuring the Russian Academy of Sciences: defining clear criteria for the feasibility of ongoing research; further reduce wasted scientific organizations, thereby increasing funding for promising areas of work. In addition, the Ministry of Education considers it necessary to place under state control the income received by the leadership of the Russian Academy of Sciences from the management of real estate provided to this institution for indefinite free use.

As the authors of the project expected, the reform concept agreed with the Russian Academy of Sciences would be brought to the attention of the Cabinet of Ministers before July 1. However, in fact, the process only progressed to the stage of reading the document by academic authorities and at this stage it seems to have slowed down.

Participants in the general meeting of the Russian Academy of Sciences held at the end of May flatly refused to agree with the provisions of the concept, seeing in the proposed measures “financial strangulation with an eye to the privatization of scientific institutions.” However, the desperate resistance of the scientific elite to the changes did not come as a surprise.

Back in 2002, the Accounts Chamber of the Russian Federation, checking the finances of the Russian Academy of Sciences, discovered “inappropriate expenditures” by the Academy of budgetary funds in the amount of 137 million rubles. for 2000-2001.

Subsequently, the Accounts Chamber suspended the application of the sanctions prescribed for such a case, taking into account the statement of the Vice-President of the Russian Academy of Sciences, Academician Gennady Mesyats, who promised to “settle in the government of the Russian Federation the issues that led to the violation of current regulatory legal acts.” The wording is apparently unclear. However, the signature of an influential learned man was enough.

But did it help? Does not look like it. In the first quarter of last year, the Academy was visited by auditors from the Ministry of Property, who inspected the Property Management Agency of the Russian Academy of Sciences regarding the approval of investment agreements. The inspection was carried out by the supervisory agency in connection with a special request from the Russian FSB. As it turned out, the leadership of the Russian Academy of Sciences really freely disposed of state real estate in its own interests, without having any special rights to do so. As the commission's report states, "a number of investment agreements contain provisions that violate the requirements of federal legislation regarding the transfer of federal property." For example, on February 28, 2003, the head of the Agency, academician Leopold Leontyev, signed a contract between the State Unitary Enterprise Nauka Publishing House (a division of the Russian Academy of Sciences) and Dekra Academ Invest CJSC for the construction of an office and residential building on a land plot owned by Nauka in Pozharsky Lane . The market value of the site and the total amount of investment are not indicated in the contract, only the residual book value of the buildings intended for demolition appears. During the inspection of the constituent documents, it turned out that Dekra Academ Invest CJSC was officially registered just a week before the decision of the RAS commission to conclude a contract with it investment agreement. Of course, we are not even talking about holding a legally required competition among potential investors in this case, as in many others. Acting according to the same scheme, the agency put into circulation plots worth huge amounts of money in the very center of Moscow, concluding investment agreements between the Administration of the Russian Academy of Sciences and OJSC "Holding Company Glavmosstroy"; the Institute of State and Law and the Academic Law University; Institute of Latin America and LLC "KV-Engineering".

Official revenues to the RAS budget from the rental of academic real estate last year amounted to about 800 million rubles. Shadow income received by the Academy administration only from illegal contracts identified during the audit is estimated by experts at 4-5 billion rubles. As for the actual scale of development of this gold mine, one can only guess about it - the “authoritative” example of the Russian Academy of Sciences is today followed by most of all kinds of state scientific organizations.

At the same time, the state budget continues to be the only source of funds to continue research and pay staff.

So the desire of the Ministry of Education and Science to consolidate all funds received by scientific institutions as a result of the use of state property is quite understandable. According to the reform project, special public councils will control the distribution of these incomes.

As for the RAS, it is assigned the role of an expert and coordinating organization in the field of fundamental science. To each, as they say, his own.

© "Profile", 06/20/2005
How to specifically cut a "Russian Nobel"

Sergey Leskov

The President of the Russian Academy of Sciences, Yuri Osipov, wrote a statement with only one line. Academician Osipov is a mathematician, and this line is simple and clear, like a mathematical formula. RAS President Yuri Osipov wrote a notice that he was resigning from his duties as Chairman of the Board of Trustees of the international Global Energy Prize, which is the largest prize in Russia.

The idea of ​​the prize was first publicly expressed in 2002 by Putin, who was convinced of its propaganda and practical benefits by Nobel laureate Zhores Alferov. “Global Energy” was declared as the “Russian Nobel”, which corresponds to the gigantic size of the prize by Russian standards - about $1 million. The prize is awarded for achievements in the field of energy, where Russia, a northern and cold country, has many undoubted victories.

The founders of Global Energy were Gazprom, Yukos and RAO UES of Russia. The prize has already been awarded three times. In 2005, YUKOS's purse was empty, and the honorary right of a sponsor was entrusted to the faithful Surgutneftegaz. The first award was presented by the President of the Russian Federation with his own hand, he disdained the second ceremony, and according to rumors, the Prime Minister will not attend the third ceremony, scheduled for the end of June.

The President of the Russian Academy of Sciences is a member of the Security Council and many other councils under the President of the Russian Federation; at government meetings he sits at the main table not far from the Prime Minister. In modern times, it is difficult to remember another case in which a dignitary of such rank voluntarily relinquished his high powers. Did the mathematician Osipov calculate the consequences? Today, in the state stable, officials do not buck, but they are allowed to bear for it. Why did the mathematician Osipov dare to violate this axiom? Because he, the Chairman of the Board of Trustees of Global Energy, is ashamed of the committee’s decisions. The last award has filled the cup of patience:

In 2005, the Global Energy Prize was awarded to the chairman of the international committee of the Global Energy Prize, academician Zhores Alferov (together with a German professor). No award in the world knows such an incident. For more than a century of the Nobel Prize's existence, not a single member of the Nobel Committee has received it. But Russia has its own morality, its own ethical standards - including, as it turned out, in science, the purity and high principles of which the communist Zhores Alferov likes to talk about. Another of his favorite topics is the poverty of science, which is not sufficiently supported by the state. But Alferov’s own experiment suggests that this is a false statement. It’s just that not all scientists have yet learned to use the state.

However, the previous awards also had subtext. The first prize (together with the American who supported Alferov in his nomination for the Nobel Prize) went to Vice-President of the Russian Academy of Sciences Gennady Mesyats, who at that time managed cash flows and real estate at the academy. By the way, Mesyats is also a member of the Expert Council of Global Energy. The second prize went to academician Alexander Sheindlin, who is the honorary director of the institute, headed by the chairman of the Global Energy Expert Council. There are persistent rumors in the scientific community that the largest prize in Russia is being divided, distributing it in a narrow and trusted circle. According to current concepts, this is called “cutting”:

They came up with a good idea. And it’s a shame that Global Energy got dirty and shredded so quickly. But why be surprised? The award was dealt with exactly as it was with YUKOS, one of its founders. YUKOS was cut up by those who determined its fate. And the judges cut up “Global Energy” using the same algorithm. A high example is contagious, but safe.

Therefore, the President of the Russian Academy of Sciences should not engage in purist behavior. Or does he not know what smart people say about the white crow?

Born on March 15, 1930 in Vitebsk in the family of Ivan Karpovich and Anna Vladimirovna Alferov, natives of Belarus. The father of an eighteen-year-old boy came to St. Petersburg in 1912. He worked as a loader at the port, as a laborer at an envelope factory, and as a worker at the Lessner plant (later the Karl Marx Plant). During World War I he rose to the rank of non-commissioned officer in the Life Guards, becoming a Knight of St. George.

In September 1917, I.K. Alferov joined the Bolshevik Party and remained faithful to the ideals chosen in his youth for the rest of his life. This, in particular, is evidenced by the bitter words of Zhores Ivanovich himself: “I am happy that my parents did not live to see this time” (1994). During the civil war, I.K. Alferov commanded a cavalry regiment of the Red Army, met with V.I. Lenin, L.D. Trotsky, B.B. Dumenko. After graduating from the Industrial Academy in 1935, he went from plant director to head of the trust: Stalingrad, Novosibirsk, Barnaul, Syasstroy (near Leningrad), Turinsk (Sverdlovsk region, war years), Minsk (after the war). Ivan Karpovich was characterized by internal decency and intolerance to indiscriminate condemnation of people.

Anna Vladimirovna had a clear mind and great worldly wisdom, largely inherited by her son. She worked in the library and headed the council of social wives.

Zh.I. Alferov with his parents, Anna Vladimirovna and Ivan Karpovich (1954).

The couple, like most people of that generation, staunchly believed in revolutionary ideas. Then the fashion arose to give children sonorous revolutionary names. The younger son became Jaurès in honor of the French revolutionary Jean Jaurès, and the eldest son became Marx, in honor of the founder of scientific communism. Jaurès and Marx were the director's children, which means they had to be an example both in their studies and in public life.

The Moloch of repression bypassed the Alferov family, but the war took its toll. Marx Alferov graduated from school on June 21, 1941 in Syasstroy. He entered the Ural Industrial Institute at the Faculty of Energy, but studied for only a few weeks, and then decided that his duty was to defend his homeland. Stalingrad, Kharkov, Kursk Bulge, severe wound to the head. In October 1943, he spent three days with his family in Sverdlovsk, when he returned to the front after hospitalization. And Zhores remembered these three days, the front-line stories of his older brother, his passionate youthful faith in the power of science and engineering for the rest of his life. Guard junior lieutenant Marx Ivanovich Alferov died in battle in the “second Stalingrad” - that’s what the Korsun-Shevchenkovsky operation was called then.

In 1956, Zhores came to Ukraine to find his brother’s grave. In Kyiv, on the street, he unexpectedly met his colleague B.P. Zakharchenya, who later became one of his closest friends. We agreed to go together. We bought tickets for the ship and the very next day we sailed down the Dnieper to Kanev in a double cabin. We found the village of Khilki, near which Marx Alferov fiercely repelled the attempt of selected German divisions to leave the Korsun-Shevchenko “cauldron”. We found a mass grave with a white plaster soldier on a pedestal rising above lush grass, interspersed with simple flowers, the kind usually planted on Russian graves: marigolds, pansies, forget-me-nots.

In destroyed Minsk, Zhores studied at the only Russian male secondary school No. 42 at that time, where there was a wonderful physics teacher, Yakov Borisovich Meltzerzon. The school did not have a physics classroom, but Yakov Borisovich, who was in love with physics, knew how to convey to his students his attitude towards his favorite subject, so there was never any mischief in the rather hooligan class. Zhores, amazed by Yakov Borisovich's story about the operation of a cathode oscilloscope and the principles of radar, went in 1947 to study in Leningrad, at the Electrotechnical Institute, although his gold medal opened up the possibility of admission to any institute without exams. Leningrad Electrotechnical Institute (LETI) named after. V.I. Ulyanov (Lenin) was an institution with a unique name: it mentioned both the real name and the party nickname of a person whom part of the population of the former USSR now does not really respect (now it is the St. Petersburg State Electrotechnical University).

The foundation of science at LETI, which played an outstanding role in the development of domestic electronics and radio engineering, was laid by such “whales” as Alexander Popov, Genrikh Graftio, Axel Berg, Mikhail Chatelain. Zhores Ivanovich, according to him, was very lucky with his first scientific supervisor. In his third year, believing that mathematics and theoretical disciplines were easy, and that he needed to learn a lot “with his hands,” he went to work in the vacuum laboratory of Professor B.P. Kozyrev. There, having begun experimental work in 1950 under the guidance of Natalia Nikolaevna Sozina, who had recently defended her dissertation on the study of semiconductor photodetectors in the IR region of the spectrum, Zh.I. Alferov first encountered semiconductors, which became the main work of his life. The first monograph on semiconductor physics studied was F.F. Volkenshtein’s book “Electrical Conductivity of Semiconductors,” written during the siege of Leningrad. In December 1952, distribution took place. Zh.I. Alferov dreamed of a Phystech, headed by Abram Fedorovich Ioffe, whose monograph “Basic Concepts of Modern Physics” became a reference book for the young scientist. During the distribution, there were three vacancies, and one went to Zh.I. Alferov. Zhores Ivanovich wrote much later that his happy life in science was predetermined precisely by this distribution. In a letter to his parents in Minsk, he reported on his great happiness to work at the Ioffe Institute. Zhores did not yet know that Abram Fedorovich, two months earlier, had been forced to leave the institute he had created, where he had been director for more than 30 years.

Systematic research on semiconductors at the Institute of Physics and Technology began back in the 30s. last century. In 1932, V.P. Zhuze and B.V. Kurchatov investigated the intrinsic and impurity conductivity of semiconductors. In the same year, A.F. Ioffe and Ya.I. Frenkel created a theory of current rectification at a metal-semiconductor contact, based on the phenomenon of tunneling. In 1931 and 1936 Ya.I. Frenkel published his famous works, in which he predicted the existence of excitons in semiconductors, introducing this term itself and developing the theory of excitons. The first diffusion theory of rectifier p–n-transition, which became the basis of the theory p–n-transition by V. Shockley, was published by B.I. Davydov in 1939. On the initiative of A.F. Ioffe from the late 40s. Research into intermetallic compounds began at the Physics and Technology Institute.

On January 30, 1953, Zh.I. Alferov began working with a new scientific supervisor, at that time the head of the sector, candidate of physical and mathematical sciences Vladimir Maksimovich Tuchkevich. A small team in the sector was given a very important task: the creation of the first domestic germanium diodes and transistors with p–n junctions (see “Physics” No. 40/2000, V.V.Randoshkin. Transistor). The topic “Plane” was entrusted by the government in parallel to four institutes: FIAN and Physicotechnical Institute in the Academy of Sciences, TsNII-108 - the main radar institute of the Ministry of Defense at that time in Moscow (headed by academician A.I. Berg) - and NII-17 - the main Institute of Electronic Technology in Fryazino, near Moscow.

Phystech in 1953, by today's standards, was a small institute. Zh.I.Alferov received pass number 429 (which meant the number of all employees of the institute at that time). Then most of the famous Physics and Technology students went to Moscow to I.V. Kurchatov and to other newly created “atomic” centers. The “semiconductor elite” went with A.F. Ioffe to the newly organized semiconductor laboratory at the Presidium of the USSR Academy of Sciences. From the “older” generation of “semiconductor scientists,” only D.N. Nasledov, B.T. Kolomiets and V.M. Tuchkevich remained at the Physicotechnical Institute.

The new director of LPTI, academician A.P. Komar, did not behave in the best way towards his predecessor, but chose a completely reasonable strategy in the development of the institute. The main attention was paid to supporting work on the creation of qualitatively new semiconductor electronics, space research (high-speed gas dynamics and high-temperature coatings - Yu.A. Dunaev) and the development of methods for separating light isotopes for hydrogen weapons (B.P. Konstantinov). Purely fundamental research was not forgotten: it was at this time that the exciton was experimentally discovered (E.F. Gross), the foundations of the kinetic theory of strength were created (S.N. Zhurkov), work began on the physics of atomic collisions (V.M. Dukelsky, K. .V.Fedorenko). E.F. Gross’s brilliant report on the discovery of the exciton was delivered at Zh.I. Alferov’s first semiconductor seminar at the Phystech Institute in February 1953. He experienced an incomparable feeling - to witness the birth of an outstanding discovery in the field of science in which one is making your first steps.

The Directorate of the Physicotechnical Institute perfectly understood the need to attract young people into science, and every young specialist who came was interviewed by the Directorate. It was at this time that future members of the USSR Academy of Sciences B.P. Zakharchenya, A.A. Kaplinsky, E.P. Mazets, V.V. Afrosimov and many others were accepted into the Physics and Technology Institute.

At Phystech, Zh.I. Alferov very quickly supplemented his engineering and technical education with physics and became a highly qualified specialist in the quantum physics of semiconductor devices. The main thing was the work in the laboratory - Alferov was lucky to be a participant in the birth of Soviet semiconductor electronics. Zhores Ivanovich keeps his laboratory journal of that time as a relic with a record of his creation on March 5, 1953 of the first Soviet transistor with p–n-transition. Today one can be surprised how a very small team of very young employees under the leadership of V.M. Tuchkevich, within a few months, developed the fundamentals of technology and metrology of transistor electronics: A.A. Lebedev - production and doping of perfect germanium single crystals, Zh.I. Alferov - production transistors with parameters at the level of the best world samples, A.I. Uvarov and S.M. Ryvkin - creation of precision metrics for germanium crystals and transistors, N.S. Yakovchuk - development of circuits on transistors. In this work, to which the team devoted itself with all the passion of youth and the consciousness of the highest responsibility to the country, the formation of a young scientist, understanding of the importance of technology not only for the creation of new electronic devices, but also for physical research, the role and significance of “small” ones, took place very quickly and effectively. , at first glance, the details in the experiment, the need to understand the “simple” fundamentals before putting forward “highly scientific” explanations for unsuccessful results.

Already in May 1953, the first Soviet transistor receivers were demonstrated to “high authorities,” and in October a government commission took over the work in Moscow. Physicotechnical Institute, Lebedev Physical Institute and TsNII-108, using different design methods and transistor manufacturing technologies, successfully solved the problem, and only NII-17, blindly copying well-known American samples, failed the job. True, the country's first semiconductor institute NII-35, created on the basis of one of his laboratories, was entrusted with the development of industrial technology for transistors and diodes with p–n-transitions, which they successfully coped with.

In subsequent years, the small team of “semiconductor scientists” at the Physicotechnical Institute expanded noticeably, and in a very short time, in the laboratory of already Doctor of Physical and Mathematical Sciences, Professor V.M. Tuchkevich, the first Soviet germanium power rectifiers, germanium photodiodes and silicon solar cells were created, the behavior of impurities in germanium and silicon.

In May 1958, Zh.I. Alferov was approached by Anatoly Petrovich Aleksandrov, the future president of the USSR Academy of Sciences, with a request to develop semiconductor devices for the first Soviet nuclear submarine. To solve this problem, fundamentally new technology and design of germanium valves were needed. Deputy Chairman of the USSR Government Dmitry Fedorovich Ustinov personally (!) called the junior researcher. I had to live directly in the laboratory for two months, and the work was successfully completed in record time: already in October 1958, the devices were on the submarine. For Zhores Ivanovich, even today, the first order received in 1959 for this work is one of the most valuable awards!

Zh.I.Alferov after receiving a government award for work commissioned by the USSR Navy

The installation of valves involved numerous trips to Severodvinsk. When the Deputy Commander-in-Chief of the Navy arrived at the “reception of the topic” and was informed that there were now new germanium valves on the submarines, the admiral winced and irritably asked: “What, there weren’t any domestic ones?”

In Kirovo-Chepetsk, where, through the efforts of many Phystech employees, work was carried out to separate lithium isotopes in order to create a hydrogen bomb, Zhores met many wonderful people and vividly described them. B. Zakharchenya remembered this story about Boris Petrovich Zverev, a bison of the “defense industry” of Stalin’s times, the chief engineer of the plant. During the war, in its most difficult time, he headed an enterprise engaged in the electrolytic production of aluminum. The technological process used molasses, which was stored in a huge vat right in the workshop. Hungry workers stole it. Boris Petrovich called the workers to a meeting, made a heartfelt speech, then climbed the stairs to the top edge of the vat, unbuttoned his pants and urinated in front of everyone in the vat of molasses. This did not affect the technology, but no one stole molasses anymore. Zhores was very amused by this purely Russian solution to the problem.

For successful work, Zh.I. Alferov was regularly rewarded with cash bonuses, and soon received the title of senior researcher. In 1961, he defended his Ph.D. thesis, devoted mainly to the development and research of powerful germanium and partially silicon rectifiers. Note that these devices, like all previously created semiconductor devices, used unique physical properties p–n-transition - an artificially created distribution of impurities in a semiconductor single crystal, in which in one part of the crystal the charge carriers are negatively charged electrons, and in the other - positively charged quasiparticles, “holes” (Latin n And p that's exactly what they mean negative And positive). Since only the type of conductivity differs, but the substance is the same, p–n-transition can be called homojunction.

Thanks to p–n-transition in crystals managed to inject electrons and holes, and a simple combination of the two p–n-transitions made it possible to implement monocrystalline amplifiers with good parameters - transistors. The most common are structures with one p–n- transition (diodes and photocells), two p–n-transitions (transistors) and three p–n-transitions (thyristors). All further development of semiconductor electronics followed the path of studying single-crystal structures based on germanium, silicon, semiconductor compounds of type A III B V (elements of groups III and V of the Mendeleev Periodic Table). The improvement of the properties of devices proceeded mainly along the path of improving the methods of forming p–n-transitions and use of new materials. Replacing germanium with silicon made it possible to raise the operating temperature of devices and create high-voltage diodes and thyristors. Advances in the technology of producing gallium arsenide and other optical semiconductors have led to the creation of semiconductor lasers, highly efficient light sources and photocells. Combinations of diodes and transistors on a single monocrystalline silicon substrate became the basis of integrated circuits, on which the development of electronic computing technology was based. Miniature and then microelectronic devices, created mainly on crystalline silicon, literally swept away vacuum tubes, making it possible to reduce the size of devices by hundreds and thousands of times. Suffice it to recall the old computers that occupied huge rooms, and their modern equivalent, a laptop - a computer that resembles a small attaché case, or “diplomat”, as it is called in Russia.

But the enterprising, lively mind of Zh.I. Alferov was looking for his own path in science. And he was found, despite the extremely difficult life situation. After his lightning-fast first marriage, he had to get a divorce just as quickly, losing his apartment. As a result of scandals caused by a fierce mother-in-law in the party committee of the institute, Zhores settled in the semi-basement room of the old Physics and Technology house.

One of the conclusions of the candidate's dissertation stated that p–n-transition in a semiconductor homogeneous in composition ( homostructure) cannot provide optimal parameters for many devices. It became clear that further progress is associated with the creation p–n-transition at the boundary of semiconductors with different chemical compositions ( heterostructures).

In this regard, immediately after the appearance of the first work, which described the operation of a semiconductor laser on a homostructure in gallium arsenide, Zh.I. Alferov put forward the idea of ​​​​using heterostructures. The submitted application for a copyright certificate for this invention was classified according to the laws of that time. Only after the publication of a similar idea by G. Kroemer in the USA, the secrecy classification was lowered to the level of “for official use”, but the author’s certificate was published only many years later.

Homojunction lasers were ineffective due to high optical and electrical losses. Threshold currents were very high, and generation was carried out only at low temperatures. In his article, G. Krömer proposed the use of double heterostructures for spatial confinement of carriers in the active region. He suggested that “using a pair of heterojunction injectors, lasing can be achieved in many indirect-gap semiconductors and improved in direct-gap semiconductors.” The author's certificate of Zh.I. Alferov also noted the possibility of obtaining a high density of injected carriers and inverse population using “double” injection. It was indicated that homojunction lasers could provide “continuous lasing at high temperatures,” and it was also possible to “increase the emitting surface and use new materials to produce radiation in various regions of the spectrum.”

Initially, the theory developed much faster than the practical implementation of the devices. In 1966, Zh.I. Alferov formulated the general principles of controlling electronic and light flows in heterostructures. To avoid secrecy, only rectifiers were mentioned in the title of the article, although the same principles were applicable to semiconductor lasers. He predicted that the density of injected carriers could be many orders of magnitude higher (the “superinjection” effect).

The idea of ​​using a heterojunction was put forward at the dawn of the development of electronics. Already in the first patent related to transistors on p–n-transition, V. Shockley proposed using a wide-gap emitter to obtain one-sided injection. Important theoretical results at an early stage in the study of heterostructures were obtained by G. Kroemer, who introduced the concepts of quasi-electric and quasi-magnetic fields in a smooth heterojunction and assumed an extremely high injection efficiency of heterojunctions compared to homojunctions. At the same time, various proposals appeared for the use of heterojunctions in solar cells.

So, the implementation of a heterojunction opened up the possibility of creating more efficient devices for electronics and reducing the size of devices literally to the atomic scale. However, Zh.I. Alferov was dissuaded from working on heterojunctions by many, including V.M. Tuchkevich, who later repeatedly recalled this in speeches and toasts, emphasizing Zhores Ivanovich’s courage and gift for foreseeing the paths of scientific development. At that time, there was general skepticism about the creation of an “ideal” heterojunction, especially with theoretically predicted injection properties. And in the pioneering work of R.L. Andersen on the study of epitaxial ([taxis] means arrangement is in order, construction) Ge–GaAs transition with identical crystal lattice constants, there was no evidence of injection of nonequilibrium carriers in heterostructures.

The maximum effect was expected when using heterojunctions between a semiconductor serving as the active region of the device and a wider-gap semiconductor. The GaP–GaAs and AlAs–GaAs systems were considered the most promising at that time. To be “compatible,” these materials first had to satisfy the most important condition: to have close values ​​of the crystal lattice constant.

The fact is that numerous attempts to implement a heterojunction have been unsuccessful: after all, not only the sizes of the elementary cells of the crystal lattices of the semiconductors that make up the junction must practically coincide, but also their thermal, electrical, and crystal chemical properties must be close, as well as their crystalline and band structures.

It was not possible to find such a heterocouple. And so Zh.I. Alferov took up this seemingly hopeless business. The required heterojunction, as it turned out, could be formed by epitaxial growth, when one single crystal (or rather, its single-crystal film) was grown on the surface of another single crystal literally layer-by-layer - one single-crystal layer after another. To date, many methods of such cultivation have been developed. These are the very high technologies that ensure not only the prosperity of electronic companies, but also the comfortable existence of entire countries.

B.P. Zakharchenya recalled that Zh.I. Alferov’s small workroom was littered with rolls of graph paper, on which the tireless Zhores Ivanovich, from morning to evening, drew composition-property diagrams of multiphase semiconductor compounds in search of mating crystal lattices. Gallium arsenide (GaAs) and aluminum arsenide (AlAs) were suitable for an ideal heterojunction, but the latter instantly oxidized in air, and its use seemed out of the question. However, nature is generous with unexpected gifts; you just need to pick up the keys to her storerooms, and not engage in rude hacking, which was called for by the slogan “We cannot wait for favors from nature, taking them from her is our task.” Such keys have already been selected by a remarkable specialist in semiconductor chemistry, Physics and Technology employee Nina Aleksandrovna Goryunova, who gave the world the famous compounds A III B V. She also worked on more complex triple compounds. Zhores Ivanovich always treated Nina Alexandrovna’s talent with great reverence and immediately understood her outstanding role in science.

Initially, an attempt was made to create a GaP 0.15 As 0.85 –GaAs double heterostructure. And it was grown by gas-phase epitaxy, and a laser was formed on it. However, due to a slight mismatch in lattice constants, it, like homojunction lasers, could only operate at liquid nitrogen temperatures. It became clear to Zh.I. Alferov that it would not be possible to realize the potential advantages of double heterostructures in this way.

One of Goryunova’s students, Dmitry Tretyakov, a talented scientist with a bohemian soul in its unique Russian version, worked directly with Zhores Ivanovich. The author of hundreds of works, who trained many candidates and doctors of science, the winner of the Lenin Prize - the highest sign of recognition of creative merit at that time - did not defend any dissertation. He told Zhores Ivanovich that aluminum arsenide, which is unstable in itself, is absolutely stable in the ternary compound AlGaAs, the so-called solid solution. Evidence of this was the crystals of this solid solution grown long ago by cooling from the melt by Alexander Borshchevsky, also a student of N.A. Goryunova, which had been stored in his desk for several years. This is roughly how the GaAs–AlGaAs heteropair, which has now become a classic in the world of microelectronics, was discovered in 1967.

The study of phase diagrams and growth kinetics in this system, as well as the creation of a modified liquid-phase epitaxy method suitable for growing heterostructures, soon led to the creation of a heterostructure matched by the crystal lattice parameter. Zh.I. Alferov recalled: “When we published the first work on this topic, we were happy to consider ourselves the first to discover a unique, virtually ideal, lattice-matched system for GaAs.” However, almost simultaneously (with a delay of a month!) and independently, the Al heterostructure x Ga 1– x As–GaAs was obtained in the USA by employees of the company IBM.

From that moment on, the realization of the main advantages of heterostructures proceeded rapidly. First of all, the unique injection properties of wide-gap emitters and the superinjection effect were experimentally confirmed, stimulated emission in double heterostructures was demonstrated, and the band structure of the Al heterojunction was established x Ga 1– x As, the luminescent properties and diffusion of carriers in a smooth heterojunction, as well as extremely interesting features of current flow through a heterojunction, for example, diagonal tunnel-recombination transitions directly between holes from the narrow-gap and electrons from the wide-gap components of the heterojunction, have been carefully studied.

At the same time, the main advantages of heterostructures were realized by the group of Zh.I. Alferov:

– in low-threshold lasers based on double heterostructures operating at room temperature;

– in highly efficient LEDs based on single and double heterostructures;

– in solar cells based on heterostructures;

– in bipolar transistors on heterostructures;

– in thyristor p–n–p–n heterostructures.

If the ability to control the type of conductivity of a semiconductor by doping with various impurities and the idea of ​​​​injecting nonequilibrium charge carriers were the seeds from which semiconductor electronics grew, then heterostructures made it possible to solve the much more general problem of controlling the fundamental parameters of semiconductor crystals and devices, such as the band gap , effective masses of charge carriers and their mobility, refractive index, electronic energy spectrum, etc.

The idea of ​​semiconductor lasers p–n-transition, experimental observation of effective radiative recombination in p–n- structure based on GaAs with the possibility of stimulated emission and the creation of lasers and light-emitting diodes based on p–n-junctions were the seeds from which semiconductor optoelectronics began to grow.

In 1967, Zhores Ivanovich was elected head of the FTI sector. At the same time, he first went on a short scientific trip to England, where only theoretical aspects of the physics of heterostructures were discussed, since his English colleagues considered experimental research unpromising. Although the superbly equipped laboratories had all the facilities for experimental research, the British did not even think about what they could do. Zhores Ivanovich, with a clear conscience, spent time getting acquainted with architectural and artistic monuments in London. It was impossible to return without wedding gifts, so I had to visit “museums of material culture” - luxurious Western stores compared to Soviet ones.

The bride was Tamara Darskaya, the daughter of the actor of the Voronezh Musical Comedy Theater Georgy Darsky. She worked in Khimki near Moscow in the space company of academician V.P. Glushko. The wedding took place in the “Roof” restaurant in the “European” hotel - at that time it was quite affordable for a candidate of sciences. The family budget also allowed weekly flights on the Leningrad-Moscow route and back (even a student on a scholarship could fly on a Tu-104 plane once or twice a month, since a ticket cost only 11 rubles at the then official exchange rate of 65 kopecks per dollar). Six months later, the couple finally decided that it was better for Tamara Georgievna to move to Leningrad.

And already in 1968, on one of the floors of the “polymer” building of the Phystech, where V.M. Tuchkevich’s laboratory was located during those years, the world’s first heterolaser was “generated.” After this, Zh.I. Alferov said to B.P. Zakharchena: “Borya, I am heteroconverting all semiconductor microelectronics!” In 1968–1969 Zh.I. Alferov’s group practically implemented all the basic ideas for controlling electronic and light flows in classical heterostructures based on the GaAs–AlAs system and showed the advantages of heterostructures in semiconductor devices (lasers, LEDs, solar cells and transistors). The most important thing was, of course, the creation of low-threshold, room-temperature lasers based on the double heterostructure proposed by Zh.I. Alferov back in 1963. American competitors (M.B. Panish and I. Hayashi from Bell Telephone, G. Kressel from RCA), who knew about the potential advantages of double heterostructures, did not dare to implement them and used homostructures in lasers. Since 1968, a very tough competition really began, primarily with three laboratories of well-known American companies: Bell Telephone, IBM And RCA.

The report of Zh.I. Alferov at the International Conference on Luminescence in Newark (USA) in August 1969, which presented the parameters of low-threshold, room-temperature lasers based on double heterostructures, gave the impression of a bomb exploding to American colleagues. Professor Ya. Pankov from RCA, who had just, half an hour before the report, informed Zhores Ivanovich that, unfortunately, there was no permission for his visit to the company, immediately after the report he discovered that it had been received. Zh.I.Alferov did not deny himself the pleasure of answering that now he has no time, because IBM And Bell Telephone had already been invited to visit their laboratories even before the report. After this, as I. Hayashi wrote, in Bell Telephone redoubled efforts to develop lasers based on double heterostructures.

Seminar in Bell Telephone, an inspection of the laboratories and a discussion (and the American colleagues clearly did not hide, counting on reciprocity, technological details, structures and devices) quite clearly showed the advantages and disadvantages of the LPTI developments. The competition that soon followed to achieve continuous laser operation at room temperature was a rare example of open competition between laboratories from two antagonistic great powers at the time. Zh.I. Alferov and his staff won this competition, beating M. Panish’s group from Bell Telephone!

In 1970, Zh.I. Alferov and his collaborators Efim Portnoy, Dmitry Tretyakov, Dmitry Garbuzov, Vyacheslav Andreev, Vladimir Korolkov created the first semiconductor heterolaser operating in continuous mode at room temperature. Independently, Itsuo Hayashi and Morton Panish reported on the continuous lasing regime in lasers based on double heterostructures (with a diamond heat sink) in a paper sent to press only a month later. The continuous laser lasing mode at Fiztekh was implemented in lasers with stripe geometry, which were created using photolithography, and the lasers were installed on copper heat sinks coated with silver. The lowest threshold current density at room temperature was 940 A/cm 2 for wide lasers and 2.7 kA/cm 2 for strip lasers. The implementation of such a generation mode caused an explosion of interest. At the beginning of 1971, many universities and industrial laboratories in the USA, USSR, Great Britain, Japan, Brazil and Poland began researching heterostructures and devices based on them.

Theorist Rudolf Kazarinov made a great contribution to the understanding of electronic processes in heterolasers. The generation time of the first laser was short. Zhores Ivanovich admitted that he had just enough to measure the parameters necessary for the article. Extending the service life of lasers was quite difficult, but it was successfully solved through the efforts of physicists and technologists. Now, most owners of CD players are unaware that audio and video information is read by a semiconductor heterolaser. Such lasers are used in many optoelectronic devices, but primarily in fiber-optic communication devices and various telecommunication systems. It is difficult to imagine our life without heterostructure LEDs and bipolar transistors, without low-noise transistors with high electron mobility for high-frequency applications, including, in particular, satellite television systems. Following the heterojunction laser, many other devices were created, including solar energy converters.

The importance of achieving continuous operation of double heterojunction lasers at room temperature is primarily due to the fact that at the same time, low-loss optical fiber was created. This led to the birth and rapid development of fiber-optic communication systems. In 1971, these works were noted by awarding Zh.I. Alferov the first international award - the Ballantyne Gold Medal of the Franklin Institute in the USA. The special value of this medal, as noted by Zhores Ivanovich, lies in the fact that the Franklin Institute in Philadelphia awarded medals to other Soviet scientists: in 1944 to Academician P.L. Kapitsa, in 1974 to Academician N.N. Bogolyubov, and in 1981 to academician A.D. Sakharov. It is a great honor to be in such a company.

The awarding of the Ballantyne Medal to Zhores Ivanovich has a backstory connected with his friend. One of the first Physics and Technology students to come to the USA in 1963 was B.P. Zakharchenya. He flew around almost all of America, meeting with such luminaries as Richard Feynman, Carl Anderson, Leo Szilard, John Bardeen, William Fairbank, Arthur Schawlow. At the University of Illinois, B.P. Zakharchenya met Nick Holonyak, the creator of the first efficient gallium arsenide-phosphide LED emitting light in the visible region of the spectrum. Nick Holonyak is one of the leading American scientists, a student of John Bardeen, the only two-time Nobel Prize winner in the world in the same specialty (physics). He recently received an award as one of the founders of a new direction in science and technology - optoelectronics.

Nick Holonyak was born in the USA, where his father, a simple miner, emigrated from Galicia before the October Revolution. He brilliantly graduated from the University of Illinois, and his name is written in golden letters on a special “Honor Board” of this university. B.P. Zakharchenya recalled: “A snow-white shirt, a bow tie, a short haircut in the fashion of the 60s and, finally, an athletic figure (he lifted weights) made him a typical American. This impression was further strengthened when Nick spoke his native American language. But suddenly he switched to his father's language, and there was nothing left of the American gentleman. It was not Russian, but an amazing mixture of Russian and Ruthenian (close to Ukrainian), flavored with salty miner jokes and strong peasant expressions learned from their parents. At the same time, Professor Kholonyak laughed very contagiously, turning into a mischievous Rusyn guy before our eyes.”

Back in 1963, showing B.P. Zakharchena a miniature LED, shining brightly green, under a microscope, Professor Kholonyak said: “Marvel, Boris, at my suit. Nex time, tell them at your institute, maybe someone from your boys would like to come here to Illinois. I will teach him how to be a svitla.”

From left to right: Zh.I. Alferov, John Bardeen, V.M. Tuchkevich, Nick Holonyak (University of Illinois, Urbana, 1974)

Seven years later, Zhores Alferov came to Nick Kholonyak’s laboratory (being already familiar with him - in 1967 Kholonyak visited Alferov’s laboratory at the Physics and Technology Institute). Zhores Ivanovich was not the “lad” who needed to learn how to “be a gentleman.” I could teach myself. His visit was very successful: the Franklin Institute at that time was just awarding another Ballantyne medal for the best work in physics. Lasers were in vogue, and the new heterolaser, promising enormous practical prospects, attracted special attention. There were competitors, but the publications of Alferov’s group were the first. Support for the work of Soviet physicists by such authorities as John Bardeen and Nick Holonyak certainly influenced the commission's decision. It is very important in any business to be in the right place at the right time. If Zhores Ivanovich had not ended up in the States then, it is possible that this medal would have gone to competitors, although he was the first. It is known that “ranks are given by people, but people can be deceived.” Many American scientists were involved in this story, for whom Alferov’s reports on the first laser based on a double heterostructure were a complete surprise.

Alferov and Kholonyak became close friends. In the process of various contacts (visits, letters, seminars, telephone conversations), which play an important role in everyone’s work and life, they regularly discuss problems in the physics of semiconductors and electronics, as well as aspects of life.

The almost seemingly happy exception of the Al heterostructure x Ga 1– x As was subsequently expanded endlessly with multicomponent solid solutions - first theoretically, then experimentally (the most striking example is InGaAsP).

Space station "Mir" with solar batteries based on heterostructures

One of the first experiences of successful application of heterostructures in our country was the use of solar panels in space research. Solar cells based on heterostructures were created by Zh.I. Alferov and co-workers back in 1970. The technology was transferred to NPO Kvant, and solar cells based on GaAlAs were installed on many domestic satellites. When the Americans published their first works, Soviet solar panels were already flying on satellites. Their industrial production was launched, and their 15-year operation at the Mir station brilliantly proved the advantages of these structures in space. And although the forecast of a sharp reduction in the cost of one watt of electrical power based on semiconductor solar cells has not yet come true, in space the most efficient source of energy to this day is certainly solar cells based on heterostructures of A III B V compounds.

There were enough obstacles on Zhores Alferov’s path. As usual, our special services of the 70s. they didn’t like his numerous foreign awards, and they tried to prevent him from going abroad to international scientific conferences. Envious people appeared who tried to take over the matter and wipe Zhores Ivanovich away from fame and the funds necessary to continue and improve the experiment. But his entrepreneurial spirit, lightning-fast reaction and clear mind helped to overcome all these obstacles. “Lady Luck” also accompanied us.

1972 was a particularly happy year. Zh.I. Alferov and his student colleagues V.M. Andreev, D.Z. Garbuzov, V.I. Korolkov and D.N. Tretyakov were awarded the Lenin Prize. Unfortunately, due to purely formal circumstances and ministerial games, R.F. Kazarinov and E.L. Portnoy were deprived of this well-deserved award. In the same year, Zh.I. Alferov was elected to the USSR Academy of Sciences.

On the day the Lenin Prize was awarded, Zh.I. Alferov was in Moscow and called home to report this joyful event, but the phone did not answer. He called his parents (they had lived in Leningrad since 1963) and happily told his father that his son was a Lenin Prize laureate, and in response he heard: “What is your Lenin Prize? Our grandson was born!” The birth of Vanya Alferov was, of course, the greatest joy of 1972.

The further development of semiconductor lasers was also associated with the creation of a laser with distributed feedback, proposed by Zh.I. Alferov in 1971 and implemented several years later at the Physicotechnical Institute.

The idea of ​​stimulated emission in superlattices, expressed at the same time by R.F. Kazarinov and R.A. Suris, was implemented a quarter of a century later in Bell Telephone. Research into superlattices, started by Zh.I. Alferov and co-authors in 1970, unfortunately, developed rapidly only in the West. Work on quantum wells and short-period superlattices in a short time led to the birth of a new field of solid-state quantum physics - the physics of low-dimensional electronic systems. The apogee of these works is currently the study of zero-dimensional structures - quantum dots. The work in this direction carried out by Zh.I. Alferov’s students of the second and third generations: P.S. Kop’ev, N.N. Ledentsov, V.M. Ustinov, S.V. Ivanov, has received wide recognition. N.N. Ledentsov became the youngest corresponding member of the Russian Academy of Sciences.

Semiconductor heterostructures, especially double ones, including quantum wells, wires and dots, are now the focus of two-thirds of semiconductor physics research groups.

In 1987, Zh.I. Alferov was elected director of the Physicotechnical Institute, in 1989 - chairman of the presidium of the Leningrad Scientific Center of the USSR Academy of Sciences, and in April 1990 - vice-president of the USSR Academy of Sciences. Subsequently, he was re-elected to these posts in the Russian Academy of Sciences.

The main thing for Zh.I. Alferov in recent years was the preservation of the Academy of Sciences as the highest and unique scientific and educational structure in Russia. They wanted to destroy it in the 20s. as “the legacy of the totalitarian tsarist regime,” and in the 90s. – as “the legacy of the totalitarian Soviet regime.” To preserve it, Zh.I. Alferov agreed to become a deputy in the State Duma of the last three convocations. He wrote: “For the sake of this great cause, we sometimes made compromises with the authorities, but not with our conscience. Everything that humanity has created, it has created thanks to science. And if our country is destined to be a great power, then it will be not thanks to nuclear weapons or Western investments, not thanks to faith in God or the president, but thanks to the work of its people, faith in knowledge, in science, thanks to the preservation and development of scientific potential and education." Television broadcasts of State Duma meetings have repeatedly testified to the remarkable socio-political temperament and ardent interest of Zh.I. Alferov in the prosperity of the country in general and science in particular.

Among other scientific awards of Zh.I. Alferov, we note the Hewlett-Packard Prize of the European Physical Society, the State Prize of the USSR, the Welker Medal; Karpinsky Prize, established in Germany. Zh.I.Alferov is a full member of the Russian Academy of Sciences, a foreign member of the National Academy of Engineering and the US Academy of Sciences, and a member of many other foreign academies.

Being the vice-president of the Academy of Sciences and a deputy of the State Duma, Zh.I. Alferov does not forget that as a scientist he grew up within the walls of the famous Physico-Technical Institute, founded in Petrograd in 1918 by the outstanding Russian physicist and organizer of science Abram Fedorovich Ioffe. This institute has given physical science a vibrant constellation of world-famous scientists. It was at the Physics and Technology Institute that N.N. Semenov conducted research on chain reactions, which was later awarded the Nobel Prize. Outstanding physicists I.V. Kurchatov, A.P. Aleksandrov, Yu.B. Khariton and B.P. Konstantinov worked here, whose contribution to solving the atomic problem in our country cannot be overestimated. The most talented experimenters - Nobel laureate P.L. Kapitsa and G.V. Kurdyumov, theoretical physicists of rare talent - G.A. Godov, Ya.B. Zeldovich and Nobel laureate L.D. Landau began their scientific activities at the Phystech. The name of the institute will always be associated with the names of one of the founders of the modern theory of condensed matter, Ya. I. Frenkel, and the brilliant experimenters E. F. Gross and V. M. Tuchkevich (who headed the institute for many years).

Zh.I.Alferov contributes to the development of Phystech as best he can. A Physics and Technology School was opened at the Physicotechnical Institute and the process of creating specialized educational departments on the basis of the institute continued. (The first department of this kind - the Department of Optoelectronics - was created at LETI back in 1973. On the basis of the already existing and newly organized basic departments, the Faculty of Physics and Technology was created at the Polytechnic Institute in 1988. The development of the academic education system in St. Petersburg was expressed in the creation of a medical faculty at the University and a comprehensive Scientific and Educational Center of the Physicotechnical Institute, which united schoolchildren, students and scientists in one beautiful building, which can rightfully be called the Palace of Knowledge. Using the opportunities of the State Duma for wide communication with influential people, Zh.I. Alferov “knocked out” money for the creation of a Scientific and Educational Center from each prime minister (and they change so often). The first, most significant contribution was made by V.S. Chernomyrdin. Now the huge building of this center, built by Turkish workers, stands not far from the Physics and Technology Institute, clearly showing what an enterprising person obsessed with a noble idea is capable of.

Since childhood, Zhores Ivanovich has been accustomed to speaking in front of a wide audience. B.P. Zakharchenya recalls his stories about the resounding success that he gained by reading from the stage almost in preschool age M. Zoshchenko’s story “The Aristocrat”: “I, my brothers, do not like women who wear hats. If a woman is wearing a hat, if she is wearing fildecos stockings...”

As a ten-year-old boy, Zhores Alferov read Veniamin Kaverin’s wonderful book “Two Captains” and for the rest of his life he followed the principle of its main character Sanya Grigoriev: “Fight and search, find and not give up!”

Who is he – “free” or “free”?

The Swedish king presents Zh.I. Alferov with the Nobel Prize

Compiled
V.V.RANDOSHKIN

based on materials:

Alferov Zh.I. Physics and life. – St. Petersburg: Nauka, 2000.

Alferov Zh.I. Double heterostructures: Concept and applications in physics, electronics and technology. – Uspekhi Fizicheskikh Nauk, 2002, v. 172, no. 9.

Science and humanity. International Yearbook. – M., 1976.

Zhores Alferov is, without exaggeration, the greatest living Soviet and Russian physicist, the only surviving Nobel Prize laureate in physics living in Russia, the patriarch of parliamentary politics.

Family

Zhores Alferov grew up in the family of a Belarusian Ivan Karpovich Alferov and a Jewish woman Anna Vladimirovna Rosenblum. The elder brother Marx Ivanovich Alferov died at the front.

Zhores Alferov is married for the second time to Tamara Darskaya. From this marriage Alferov has a son, Ivan. It is also known that Alferov has a daughter from his first marriage, with whom he does not maintain a relationship, and an adopted daughter, Irina, the daughter of his second wife from his first marriage.

Biography

The outbreak of the war did not allow young Zhores Alferov to finish school, and he continued his studies immediately after the end of the war in destroyed Minsk, in the only working Russian men's secondary school No. 42.

After graduating from school with a gold medal, Zhores Alferov went to Leningrad and, without entrance exams, was enrolled in the Faculty of Electronic Engineering Leningrad Electrotechnical Institute named after V.I. Ulyanova (LETI).

In 1950, student Zhores Alferov, who specialized in electric vacuum technology, began working in the vacuum laboratory of Professor B.P. Kozyreva.

In December 1952, during the assignment of students to his department at LETI, Zhores Alferov chose the Leningrad Institute of Physics and Technology (LPTI), which was headed by the famous Abram Ioffe. At LFTI Alferov became a junior researcher and took part in the development of the first domestic transistors.

In 1959, for his work in the USSR Navy, Zhores Alferov received his first government award - the Badge of Honor.

In 1961, Alferov defended a secret dissertation on the development and research of powerful germanium and silicon rectifiers, and received the degree of Candidate of Technical Sciences.

In 1964, Zhores Alferov became a senior research fellow Phystechtech.

In 1963, Alferov began studying semiconductor heterojunctions. In 1970, Alferov defended his doctoral dissertation, summarizing a new stage of research into heterojunctions in semiconductors. In fact, he created a new direction - the physics of heterostructures.

In 1971, Zhores Alferov was awarded his first international award - the Ballantyne Medal, established by the Franklin Institute in Philadelphia. In 1972 Alferov became a laureate Lenin Prize.

In 1972, Alferov became a professor, and a year later - head of the basic department of optoelectronics at LETI, opened at the Faculty of Electronic Engineering at the Physics and Technology Institute. In 1987, Alferov headed the Physics and Technology Institute, and in 1988, at the same time, he became the dean of the Faculty of Physics and Technology of the Leningrad Polytechnic Institute (LPI).

In 1990, Alferov became vice-president of the USSR Academy of Sciences.

On October 10, 2000, it became known that Zhores Alferov became a laureate Nobel Prize in Physics- for the development of semiconductor heterostructures for high-speed and optoelectronics. He shared the prize itself with two other physicists - Kremer and Jack Kilby.

In 2001, Alferov became a laureate of the State Prize of the Russian Federation.

In 2003, Alferov left the post of head of the Physics and Technology Institute, remaining the scientific director of the institute. In 2005, he became chairman of the St. Petersburg Physics and Technology Research and Education Center of the Russian Academy of Sciences.

Zhores Alferov is a world-recognized scientist who created his own scientific school and trained hundreds of young scientists. Alferov is a member of a number of scientific organizations around the world.

Policy

Zhores Alferov has been a member since 1944 Komsomol, and since 1965 - member CPSU. Alferov began to get involved in politics in the late 80s. From 1989 to 1992, Alferov was a people's deputy of the USSR.

In 1995, Zhores Alferov was elected deputy State Duma second convocation from the movement "Our home is Russia". In the State Duma, Alferov headed the subcommittee on science of the Committee on Science and Education of the State Duma.

Most of the time Alferov was a member of the “Our Home is Russia” faction, but in April 1999 he joined the “People’s Power” parliamentary group.

In 1999, Alferov was again elected as a deputy of the State Duma of the third, and then in 2003 - the fourth convocation, running on party lists Communist Party of the Russian Federation without being a party member. In the State Duma, Alferov continued to serve on the parliamentary committee on education and science.

In 2001-2005, Alferov headed the presidential commission on the import of spent nuclear fuel.

In 2007, Alferov was elected to the State Duma of the fifth convocation from the Communist Party of the Russian Federation, becoming the oldest deputy of the lower house. Since 2011, Alferov has been a deputy of the State Duma of the sixth convocation from the Communist Party of the Russian Federation.

In 2013 he ran for president RAS and, having received 345 votes, took second place.

In April 2015, Zhores Alferov returned to the Public Council under Ministry of Education and Science of the Russian Federation. Alferov left the post of chairman of the public council under the Ministry of Education in March 2013.

The scientist said that the reason for leaving was disagreements with the minister Livanov on the role of the Russian Academy of Sciences. He explained that the minister " spoke completely differently about the role and significance of the Russian Academy of Sciences"Also, the Nobel laureate believed that Livanov either does not understand the traditions of effective cooperation between the Russian Academy of Sciences and universities, or" deliberately trying to separate science and education".

Income

According to Zhores Alferov’s declaration, in 2012 he earned 17,144,258.05 rubles. He owns two land plots with an area of ​​12,500.00 sq. m. m, two apartments with an area of ​​216.30 sq. m, with a dacha area of ​​165.80 sq. m and a garage.

Gossip

After the reform of the Russian Academy of Sciences began in 2013, Alferov was called its main opponent. At the same time, Alferov himself did not sign the statement of the scientists included in Club "1 July", his name is not under the Appeal of Russian scientists to the top leaders of the Russian Federation.

In July 2007, Zhores Alferov became one of the authors of the appeal of RAS academicians to the President of Russia Vladimir Putin, in which scientists spoke out against the “increasing clericalization of Russian society”: academicians opposed the introduction of the specialty “theology” and against the introduction of a compulsory school subject “Fundamentals of Orthodox Culture”.

100 famous scientists Sklyarenko Valentina Markovna

ALFEROV ZHORES IVANOVICH (b. 1930)

ALFEROV ZHORES IVANOVICH

(b. 1930)

The famous Soviet and Russian scientist Zhores Ivanovich Alferov was born on March 15, 1930 in the city of Vitebsk (then in the Belarusian SSR).

His parents were native Belarusians. The father of the future scientist, Ivan Karpovich Alferov, changed many professions.

During the First World War he fought, was a hussar, and a non-commissioned officer in the Life Guards. For his bravery he was nominated for decoration, becoming a Knight of St. George twice.

In September 1917, the elder Alferov joined the Bolshevik Party, and after some time he switched to economic work. Since 1935, Zhores' father held various leadership positions at military factories in the USSR. He worked as a director of a plant, a combine, and as the head of a trust. Due to the nature of his father’s work, the family often moved from place to place. Little Alferov had a chance to see Stalingrad, Novosibirsk, Barnaul, Syasstroy near Leningrad, Turinsk in the Sverdlovsk region, and dilapidated Minsk.

The boy's mother, Anna Vladimirovna, worked in the library, in the personnel department, and most of the time she was a housewife.

The parents of the future scientist were avid communists. They named their eldest son Marx (in honor of Karl Marx), and the youngest received the name Jaurès (in honor of Jean Jaurès, founder of the French Socialist Party, ideologist and founder of the newspaper L'Humanité).

Jaurès's childhood memories are often related to his older brother. Marx helped the boy with his studies and never gave him offense. After graduating from school and several months of studying at the Ural Industrial Institute, he dropped everything and went to the front to defend his homeland. At the age of 20, junior lieutenant Marks Alferov was killed.

Zhores received his primary education in Syasstroy. On May 9, 1945, the boy’s father was assigned to Minsk, where the family soon moved. In Minsk, Zhores was assigned to study at the only secondary school in the city, No. 42, which was not destroyed, from which he graduated in 1948 with a gold medal.

The physics teacher at school No. 42 was the famous Ya. B. Meltzerzon. Despite the lack of a physical classroom, the teacher managed to instill love and interest in the students in his subject. Noticing the talented boy, Yakov Borisovich helped him in his studies in every possible way. After graduating from school, the teacher recommended Alferov to go to Leningrad and enter the Leningrad Electrotechnical Institute. V. I. Lenin (LETI).

Physical lessons had a magnetic effect on young Alferov. He was especially interested in the teacher's story about the operation of a cathode oscilloscope and the principles of radar, so that after school the boy already knew exactly what he wanted to be. He entered LETI to major in “electrovacuum engineering” at the Faculty of Electronic Engineering (FET). At that time, the institute was one of the “pilot” universities in the field of domestic electronics and radio engineering.

In the third year, the capable student was hired to work in the vacuum laboratory of Professor B.P. Kozyrev, where young Alferov began his first experimental work under the guidance of Natalya Nikolaevna Sozina. Later Alferov spoke very warmly about his first scientific supervisor. Shortly before joining the Zhores Institute, she herself defended her dissertation work on the study of semiconductor photodetectors in the infrared region of the spectrum and helped in every possible way in Zhores Alferov’s research.

The student really liked the atmosphere in the laboratory and the research process, and he decided to become a professional physicist. Jaurès was especially interested in the study of semiconductors. Under the guidance of Sozina, Alferov wrote his thesis devoted to the production of films and the study of the photoconductivity of bismuth telluride.

In 1952, Alferov graduated from LETI and decided to continue scientific research in the area of ​​physics that interested him. When assigning graduates to work, Alferov was lucky: he refused to stay at LETI and was accepted into the Physico-Technical Institute. A. F. Ioffe (LPTI).

At that time, the young scientist’s reference book was Abram Fedorovich Ioffe’s monograph “Basic Concepts of Modern Physics.” Being assigned to the Physics and Technology Institute was one of the happiest moments in the life of the famous scientist, which determined his future path in science.

By the time the young specialist arrived at the institute, the luminary of Soviet science, the director of LPTI, Abram Fedorovich Ioffe, had already resigned from his post. “Under Ioffe” a semiconductor laboratory was formed at the Presidium of the USSR Academy of Sciences, where the outstanding scientist assigned almost all the best physicists and researchers in the semiconductor field. The young scientist was lucky for the second time - he was seconded to this laboratory.

The great A.F. Ioffe was a pioneer of semiconductor science in general and the founder of domestic developments in this field. It was thanks to him that Phystech became the center of semiconductor physics.

In the 1930s, various studies were carried out at the Physics and Technology Institute, which became the fundamental foundations of a new field of physics. Among such works, especially noteworthy is the joint work of Ioffe and Frenkel in 1931, in which scientists described the tunnel effect in semiconductors, as well as the work of Juse and Kurchatov on the intrinsic and impurity conductivity of semiconductors.

However, after a series of successful works, Ioffe became interested in nuclear physics, other brilliant physicists were engaged in other fields of science close to them, so the development of semiconductor physics slowed down somewhat. Who knows how things would have developed further if in 1947 American scientists had not been able to achieve the transistor effect on a point-point transistor. In 1949, the first transistor with p-n-transitions.

In the early 1950s, the Soviet government set the institute a specific task - to develop modern semiconductor devices that could be used in domestic industry. The semiconductor laboratory had to obtain pure germanium single crystals and use them to create planar diodes and triodes. American scientists proposed a method for mass industrial production of transistors in November 1952, now it was the turn of Soviet scientists.

The young scientist found himself at the very epicenter of scientific developments. He had the opportunity to participate in the creation of the first domestic transistors, photodiodes, powerful germanium rectifiers, etc.

Tuchkevich’s laboratory completed the task of the Soviet government “excellently.” Zhores Alferov took an active part in the development. Already on March 5, 1953, he made the first transistor that could cope with loads and showed good performance. In 1959, Zhores Alferov received a government award for the complex of work carried out.

In 1960, together with other scientists, Jaurès went to an international conference on semiconductor physics in Prague. Among the famous scientists present there were Abram Ioffe and John Bardeen, a representative of the famous trinity Bardeen - Shockley - Brattain, who created the first transistor in 1947. After attending the conference, Alferov became even more interested in scientific research.

The following year, Zhores Alferov defended his PhD thesis, dedicated to the creation and research of powerful germanium and partially silicon rectifiers, and was awarded the degree of Candidate of Technical Sciences. In fact, this work summed up his ten years of research in this field of science.

He did not have any special thoughts about which area of ​​physics to choose for further research - he was already seriously working on the production of semiconductor heterostructures and the study of heterojunctions. Alferov understood that if he managed to create a perfect structure, it would be a real leap in semiconductor physics.

At that time, domestic power semiconductor electronics was formed. For a long time, scientists were unable to develop devices based on heterojunctions due to the difficulty of creating a junction close to ideal.

Alferov showed that in such varieties p-n-transitions, how p-i-n, p-n-n+ in semiconductor homostructures, at operating current densities, the current in the throughput direction is determined by recombination in heavily doped R And n(n+) areas of structures. At the same time, the average i(n) the homostructure region is not the main one.

When working on a semiconductor laser, the young scientist proposed using the advantages of a double heterostructure like p-i-n (р-n-n+, n-p-p+) . The application for Alferov's copyright certificate was classified; the classification was lifted only after the American scientist Kremer published similar findings.

At the age of 30, Alferov was already one of the leading experts in the field of semiconductor physics in the Soviet Union. In 1964, he was invited to take part in an international conference on semiconductor physics held in Paris.

Two years later, Zhores Alferov formulated the general principles of controlling electronic and light flows in heterostructures.

In 1967, Alferov was elected head of the LPTI laboratory. Work on heterostructure research was in full swing. Soviet scientists came to the conclusion that it is possible to realize the main advantages of a heterostructure only after obtaining an Al-type heterostructure x Ga1- x As.

In 1968, it became clear that Soviet physicists were not the only ones working on this study of heterostructures. It turned out that Alferov and his team were only a month ahead of researchers from the IBM laboratory in their discovery of an Al-type heterostructure x Ga1- x As. In addition to IBM, such monsters of electronics and semiconductor physics as Bell Telephone and RCA took part in the research race.

In the laboratory of N.A. Goryunova, it was possible to select a new version of the heterostructure - the AlGaAs ternary compound, which made it possible to determine the GaAs/AlGaAs heteropair, which is currently popular in the electronic world.

By the end of 1969, Soviet scientists, led by Alferov, had implemented almost all possible ideas for controlling electronic and light flows in classical heterostructures based on the gallium arsenide - aluminum arsenide system.

In addition to creating a heterostructure close in its properties to the ideal model, a group of scientists led by Alferov created the world's first semiconductor heterolaser operating in continuous mode at room temperature. Competitors from Bell Telephone and RCA offered only weaker options based on the use of a single heterostructure in lasers p AlGaAs- p GaAs.

In August 1969, Alferov made his first trip to the United States to the International Conference on Luminescence in Newark, Delaware. The scientist did not deny himself the pleasure and made a report in which he mentioned the characteristics of the created AlGaAs-based lasers. The effect of Alferov’s report exceeded all expectations - the Americans were far behind in their research, and only specialists from Bell Telephone a few months later repeated the success of Soviet scientists.

Based on the technology of highly efficient and radiation-resistant solar cells based on AlGaAs/GaAs heterostructures developed in the 1970s by Alferov, the Soviet Union was the first in the world to organize mass production of heterostructure solar cells for space batteries. When similar works were published by American scientists, Soviet batteries had already been used for many years for various purposes. In particular, one of these batteries was installed in 1986 on the Mir space station. Over the course of many years of operation, it operated without significant reduction in power.

In 1970, based on ideal transitions in multicomponent InGaAsP compounds (proposed by Alferov), semiconductor lasers were designed, which were used, in particular, as radiation sources in long-range fiber-optic communication lines.

In the same 1970, Zhores Ivanovich Alferov successfully defended his doctoral dissertation, in which he summarized the research of heterojunctions in semiconductors, the advantages of using heterostructures in lasers, solar batteries, transistors, etc. For this work, the scientist was awarded the degree of Doctor of Physical and Mathematical Sciences.

In a short period of time, Zhores Alferov achieved truly phenomenal results. His work led to the rapid development of fiber-optic communication systems. The following year, the scientist was awarded the first international award - the Ballantyne Gold Medal of the Franklin Institute in the USA (Philadelphia), which in the world of science is called the “small Nobel Prize.” By 2001, in addition to Alferov, only three Soviet physicists were awarded a similar medal - P. Kapitsa, N. Bogolyubov and A. Sakharov.

In 1972, the scientist, together with his student colleagues, was awarded the Lenin Prize. In the same year, Zhores Ivanovich became a professor at LETI, and the next year he became the head of the basic department of optoelectronics (EO) at the Faculty of Electronic Engineering of the Physicotechnical Institute. In 1988, Zh. I. Alferov organized the Faculty of Physics and Technology at the St. Petersburg Polytechnic Institute and became its dean.

Alferov’s works in the 90s of the 20th century were devoted to studying the properties of nanostructures of reduced dimensionality: quantum wires and quantum dots.

On October 10, 2000, the Nobel Committee in Physics awarded the 2000 Nobel Prize to Zhores Ivanovich Alferov, Herbert Kroemer and Jack Kilby for "their basic work in the field of information and communication systems." Specifically, Alferov and Kroemer received the prize “for the development of semiconductor heterostructures that are used in ultra-fast microelectronic components and fiber-optic communications.”

With their work, all three laureates significantly accelerated the development of modern technology, in particular Alferov and Kroemer discovered and developed fast and reliable opto- and microelectronic components, which are used today in a wide variety of fields.

The scientists divided the $1 million cash prize among themselves in the following proportions: Jack Kilby received half the prize for his work in the field of integrated circuits, and the other half was equally divided between Alferov and Kroemer.

In his presentation speech given on December 10, 2000, Professor of the Royal Swedish Academy of Sciences Tord Kleson analyzed the main achievements of three great scientists. Alferov gave his Nobel lecture on December 8, 2000 at Stockholm University in excellent English and without notes.

In 1967, Zhores Alferov married Tamara Georgievna Darskaya, the daughter of a famous actor. His wife worked for some time under the leadership of Academician V.P. Glushko in Moscow. People in love flew to each other from Moscow to Leningrad and back for about six months, until Tamara agreed to move to Leningrad.

In his free time from science, the scientist is interested in the history of the Second World War.

At a fairly late age, Alferov began his career as a politician. In 1989, he was elected people's deputy of the USSR and was a member of the Interregional Deputy Group. After the collapse of the Union, he did not abandon his political activities.

In the fall of 1995, the famous scientist was included as a candidate in the federal list of the electoral association “All-Russian socio-political movement “Our Home is Russia””. Based on the results of voting in the federal district, he was elected to the Russian State Duma of the second convocation (since 1995), and after some time became a member of the Committee on Education and Science (subcommittee on science).

In 1997, Alferov was included in the Scientific Council of the Security Council of the Russian Federation.

In 1999, Zhores Ivanovich was elected to the State Duma of the Russian Federation of the third convocation. The scientist was a member of the faction of the Communist Party of the Russian Federation, the successor of the CPSU, in which Alferov was a member from 1965 to August 1991. In addition, the scientist was a member of the bureau of the Leningrad Regional Committee of the CPSU in 1988–1990, and a delegate to the XXVII Congress of the CPSU.

Currently, Alferov is still an avid communist and an atheist.

More than 350 scientific articles and three fundamental scientific monographs have been published from Alferov’s pen. He has more than 100 copyright certificates for inventions. The scientist is the editor-in-chief of the Journal of Technical Physics.

In 1972, Alferov was elected a corresponding member of the USSR Academy of Sciences, in 1979 - an academician, in 1990 he became vice-president of the USSR Academy of Sciences, in 1991 - an academician of the Russian Academy of Sciences (RAN) and is now its vice-president.

At the same time, Alferov holds the positions of Chairman of the Presidium of the St. Petersburg Scientific Center of the Russian Academy of Sciences (since 1989), Director of the Center for Physics of Nanoheterostructures, Chairman of the International Foundation named after. M. V. Lomonosov for the revival and development of fundamental research in the field of natural sciences and humanities, member of the Bureau of the Division of Physical Sciences of the Russian Academy of Sciences, member of the section of general physics and astronomy of the Division of Physical Sciences of the Russian Academy of Sciences, director of the Institute of Physics and Technology of the Russian Academy of Sciences (since 1987).

Alferov takes an active position in all his positions. His work schedule is scheduled a month in advance.

In addition to the Nobel Prize, the scientist was awarded various medals and prizes, among which it is worth highlighting the gold medal named after. Stuart Ballantyne Franklin Institute (USA, 1971), the Hewlett-Packard Prize of the European Physical Society, the International Gallium Arsenide Symposium Prize (1987), the H. Welker Gold Medal (1987), the. A.F. Ioffe RAS (1996), National non-governmental Demidov Prize of the Russian Federation (1999), Kyoto Prize for advanced achievements in the field of electronics (2001).

The scientist was also awarded the Lenin Prize (1972), the USSR State Prize (1984) and the State Prize of the Russian Federation (2002).

Zhores Alferov was awarded many medals and orders of the USSR and the Russian Federation, including the Order of the Badge of Honor (1958), the Order of the Red Banner of Labor (1975), the Order of the October Revolution (1980), the Order of Lenin (1986), the medal "For Services to the Fatherland" » 3rd degree.

The Nobel laureate is an active and honorary member of various scientific societies, academies and universities, including the US National Academy of Engineering (1990), US National Academy of Sciences (1990), Korean Academy of Science and Technology (1995), Franklin Institute (1971), Academy of Sciences Republic of Belarus (1995), University of Havana (1987), Optical Society of the USA (1997), St. Petersburg Humanitarian University of Trade Unions (1998).

In 2005, a bronze bust of Zhores Alferov was installed on the territory of the St. Petersburg Humanitarian University of Trade Unions. The lifetime opening of the bust was timed to coincide with the scientist’s 75th anniversary.

The famous scientist is the founder of the Education and Science Support Fund to support talented students, promote their professional growth, and encourage creative activity in conducting scientific research in priority areas of science. Alferov was the first to make a contribution to the Foundation, using part of the funds from his Nobel Prize.

In his autobiography, prepared for the Nobel website, the scientist recalls Kaverin’s wonderful book “Two Captains,” which he read as a 10-year-old boy. Since that time, all his life he has followed the life principles of one of the main characters of the book, Sanya Grigoriev: “Fight and search, find and not give up.”

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Zhores Alferov Alferov Zhores Ivanovich - winner of the 2000 Nobel Prize in Physics for the development of semiconductor heterostructures and the creation of fast opto- and microelectronic components. Born on March 15, 1930 in Vitebsk. Academician of the Russian Academy of Sciences and State Duma deputy. - Today

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Family

Zhores Alferov grew up in the family of a Belarusian Ivan Karpovich Alferov and a Jewish woman Anna Vladimirovna Rosenblum. The elder brother Marx Ivanovich Alferov died at the front.

Zhores Alferov is married for the second time to Tamara Darskaya. From this marriage Alferov has a son, Ivan. It is also known that Alferov has a daughter from his first marriage, with whom he does not maintain a relationship, and an adopted daughter, Irina, the daughter of his second wife from his first marriage.

Biography

The outbreak of the war did not allow young Zhores Alferov to finish school, and he continued his studies immediately after the end of the war in destroyed Minsk, in the only working Russian men's secondary school No. 42.

After graduating from school with a gold medal, Zhores Alferov went to Leningrad and, without entrance exams, was enrolled in the Faculty of Electronic Engineering Leningrad Electrotechnical Institute named after V.I. Ulyanova (LETI).

In 1950, student Zhores Alferov, who specialized in electric vacuum technology, began working in the vacuum laboratory of Professor B.P. Kozyreva.

In December 1952, during the assignment of students to his department at LETI, Zhores Alferov chose the Leningrad Institute of Physics and Technology (LPTI), which was headed by the famous Abram Ioffe. At LFTI Alferov became a junior researcher and took part in the development of the first domestic transistors.

In 1959, for his work in the USSR Navy, Zhores Alferov received his first government award - the Badge of Honor.

In 1961, Alferov defended a secret dissertation on the development and research of powerful germanium and silicon rectifiers, and received the degree of Candidate of Technical Sciences.

In 1964, Zhores Alferov became a senior research fellow Phystechtech.

In 1963, Alferov began studying semiconductor heterojunctions. In 1970, Alferov defended his doctoral dissertation, summarizing a new stage of research into heterojunctions in semiconductors. In fact, he created a new direction - the physics of heterostructures.

In 1971, Zhores Alferov was awarded his first international award - the Ballantyne Medal, established by the Franklin Institute in Philadelphia. In 1972 Alferov became a laureate Lenin Prize.

In 1972, Alferov became a professor, and a year later - head of the basic department of optoelectronics at LETI, opened at the Faculty of Electronic Engineering at the Physics and Technology Institute. In 1987, Alferov headed the Physics and Technology Institute, and in 1988, at the same time, he became the dean of the Faculty of Physics and Technology of the Leningrad Polytechnic Institute (LPI).

In 1990, Alferov became vice-president of the USSR Academy of Sciences.

On October 10, 2000, it became known that Zhores Alferov became a laureate Nobel Prize in Physics- for the development of semiconductor heterostructures for high-speed and optoelectronics. He shared the prize itself with two other physicists - Kremer and Jack Kilby.

In 2001, Alferov became a laureate of the State Prize of the Russian Federation.

In 2003, Alferov left the post of head of the Physics and Technology Institute, remaining the scientific director of the institute. In 2005, he became chairman of the St. Petersburg Physics and Technology Research and Education Center of the Russian Academy of Sciences.

Zhores Alferov is a world-recognized scientist who created his own scientific school and trained hundreds of young scientists. Alferov is a member of a number of scientific organizations around the world.

Policy

Zhores Alferov has been a member since 1944 Komsomol, and since 1965 - member CPSU. Alferov began to get involved in politics in the late 80s. From 1989 to 1992, Alferov was a people's deputy of the USSR.

In 1995, Zhores Alferov was elected deputy State Duma second convocation from the movement "Our home is Russia". In the State Duma, Alferov headed the subcommittee on science of the Committee on Science and Education of the State Duma.

Most of the time Alferov was a member of the “Our Home is Russia” faction, but in April 1999 he joined the “People’s Power” parliamentary group.

In 1999, Alferov was again elected to the State Duma of the third, and then in 2003 to the fourth convocation, running on party lists without being a party member. In the State Duma, Alferov continued to serve on the parliamentary committee on education and science.

In 2001-2005, Alferov headed the presidential commission on the import of spent nuclear fuel.

In 2007, Alferov was elected to the State Duma of the fifth convocation from the Communist Party of the Russian Federation, becoming the oldest deputy of the lower house. Since 2011, Alferov has been a deputy of the State Duma of the sixth convocation from the Communist Party of the Russian Federation.

In 2013 he ran for president RAS and, having received 345 votes, took second place.

In April 2015, Zhores Alferov returned to the Public Council under Ministry of Education and Science of the Russian Federation. Alferov left the post of chairman of the public council under the Ministry of Education in March 2013.

The scientist said that the reason for leaving was disagreements with the minister over the role of the Russian Academy of Sciences. He explained that the minister " spoke completely differently about the role and significance of the Russian Academy of Sciences"Also, the Nobel laureate believed that Livanov either does not understand the traditions of effective cooperation between the Russian Academy of Sciences and universities, or" deliberately trying to separate science and education".

Income

According to Zhores Alferov’s declaration, in 2012 he earned 17,144,258.05 rubles. He owns two land plots with an area of ​​12,500.00 sq. m. m, two apartments with an area of ​​216.30 sq. m, with a dacha area of ​​165.80 sq. m and a garage.

Gossip

After the reform of the Russian Academy of Sciences began in 2013, Alferov was called its main opponent. At the same time, Alferov himself did not sign the statement of the scientists included in Club "1 July", his name is not under the Appeal of Russian scientists to the top leaders of the Russian Federation.

In July 2007, Zhores Alferov became one of the authors of the appeal of RAS academicians to the President of Russia Vladimir Putin, in which scientists spoke out against the “increasing clericalization of Russian society”: academicians opposed the introduction of the specialty “theology” and against the introduction of a compulsory school subject “Fundamentals of Orthodox Culture”.